Recently there have been major achievements in the study of semiconductor interfaces and microstructures for different materials and structural systems. Progress has been made through various experimental technologies and theoretical methods. This book provides an up-to-date review on these advances and includes the following major subjects: IV-IV, III-V and II-VI semiconductors and metal/semiconductor structures; new developments in growth methods; electric, optical, magnetic and structural characterization and properties; relative theories — electronic transport, phonos and interface modes; devices and applications. These materials are organized into four sections: General, III-V, II-VI and IV-IV, which offer comprehensive information and help readers in following the new developments in the research frontiers of the above fields. Contents:Carrier Transport in Artificially Structured Two-Dimensional Semiconductor Systems (W Walukiewicz)Miniband Conduction in Semiconductor Superlattices (A Sibille et al.)Barrier Width Dependence of Optical Properties in Semiconductor Superlattices (J J Song et al.)Radiative Processes in GaAs/AIGaAs Heterostructures (P O Holtz et al.)Type-I-Type-II Transition in GaAs/AIAs Superlattices (G H Li)Photoluminescene Studies of Interface Roughness in GaAs/AIAs Quantum Well Structures (D Gammon et al.)Optical and Magneto-Optical Properties of Narrow InxGa1-xAs-GaAs Quantum Wells (D C Reynolds & K R Evans)Growth and Studies of Antimony Based III-V Compounds by Magnetron Sputter Epitaxy Using Metalorganic and Solid Elemental Sources (J B Webb & R Rousina)Properties of Cd1-xMnxTe Films and Cd1-xMnxTe-CdTe Superlattices Grown by Pulsed Laser Evaporation and Epitaxy (J M Wrobel & J J Dubowski)Zn1-yCdySe1-xTex Quatenary II-VI Wide Bandgap Alloys and Heterostructures (R E Nahory et al.)Intersubband Transitions in SiGe/Si Quantum Structures (R P G Karunasiri et al.)High-Temperature Discrete Devices in 6H-SiC: Sublimation Epitaxial Growth, Device Technology and Electrical Performance (M M Anikin et al.) Readership: Scientists, engineers and graduate students. keywords: